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510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器

510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器

產(chǎn)品簡(jiǎn)介


510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器,尺寸5.0*3.2mm,頻率106.25MHZ,輸出邏輯LVPECL,電壓3.3V,頻率穩(wěn)定性25ppm,XO時(shí)鐘振蕩器(標(biāo)準(zhǔn)),LV-PECL輸出晶振,有源差分晶振,差分晶體振蕩器,6GWIFI差分晶振,低電壓差分振蕩器,低抖動(dòng)差分晶振,低耗能差分晶振,高性能差分晶振,儀器設(shè)備差分晶振,6G光模塊差分晶振,無(wú)線網(wǎng)絡(luò)差分振蕩器,網(wǎng)絡(luò)設(shè)備專用差分晶振,OSC差分晶振,有源差分晶振,貼片型差分振蕩器.

差分晶振產(chǎn)品具有低抖動(dòng)低電壓的特點(diǎn),主要應(yīng)用范圍SONET/SDH/OTN網(wǎng)絡(luò),千兆以太網(wǎng),光纖通道/SAS/SATA,PCI Express總線,3G-SDI/HD-SDI/SDI,電信,交換機(jī)/路由器,F(xiàn)PGA/ASIC時(shí)鐘生成等領(lǐng)域.510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器.


產(chǎn)品詳情

510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器,尺寸5.0*3.2mm,頻率106.25MHZ,輸出邏輯LVPECL,電壓3.3V,頻率穩(wěn)定性25ppm,XO時(shí)鐘振蕩器(標(biāo)準(zhǔn)),LV-PECL輸出晶振,有源差分晶振,差分晶體振蕩器,6GWIFI差分晶振,低電壓差分振蕩器,低抖動(dòng)差分晶振,低耗能差分晶振,高性能差分晶振,儀器設(shè)備差分晶振,6G光模塊差分晶振,無(wú)線網(wǎng)絡(luò)差分振蕩器,網(wǎng)絡(luò)設(shè)備專用差分晶振,OSC差分晶振,有源差分晶振,貼片型差分振蕩器.

差分晶振產(chǎn)品具有低抖動(dòng)低電壓的特點(diǎn),主要應(yīng)用范圍SONET/SDH/OTN網(wǎng)絡(luò),千兆以太網(wǎng),光纖通道/SAS/SATA,PCI Express總線,3G-SDI/HD-SDI/SDI,電信,交換機(jī)/路由器,F(xiàn)PGA/ASIC時(shí)鐘生成等領(lǐng)域.510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器.

耐振低頻進(jìn)口諧振器,大型7050mm貼片晶體,CX5晶振

510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器參數(shù)表

Parameter Symbol Test Condition Min Typ Max Unit
Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V
2.5 V option 2.25 2.5 2.75 V
1.8 V option 1.71 1.8 1.89 V
Supply Current IDD CMOS, 100 MHz,
single-ended
21 26 mA
LVDS
(output enabled)
19 23 mA
LVPECL
(output enabled)
39 43 mA
HCSL
(output enabled)
41 44 mA
Tristate
(output disabled)
18 mA
OE "1" Setting VIH See Note 0.80 x VDD V
OE "0" Setting VIL See Note 0.20 x VDD V
OE Internal Pull-Up/Pull-
Down Resistor*
RI 45
Operating Temperature TA –40 85 oC
Parameter Symbol Test Condition Min Typ Max Unit
Nominal Frequency FO CMOS, Dual CMOS 0.1 212.5 MHz
FO LVDS/LVPECL/HCSL 0.1 250 MHz
Total Stability* Frequency Stability Grade C –30 +30 ppm
Frequency Stability Grade B –50 +50 ppm
Frequency Stability Grade A –100 +100 ppm
Temperature Stability Frequency Stability Grade C –20 +20 ppm
Frequency Stability Grade B –25 +25 ppm
Frequency Stability Grade A –50 +50 ppm
Startup Time TSU Minimum VDDuntil output
frequency (FO) within specification
10 ms
Disable Time TD FO> 10 MHz 5 µs
FO< 10 MHz 40 µs
Enable Time TE FO> 10 MHz 20 µs
FO< 10 MHz 60 µs
Parameter Symbol Test Condition Min Typ Max Unit
CMOS Output Logic
High
VOH 0.85 x VDD V
CMOS Output Logic
Low
VOL 0.15 x VDD V
CMOS Output Logic
High Drive
IOH 3.3 V –8 mA
2.5 V –6 mA
1.8 V –4 mA
CMOS Output Logic
Low Drive
IOL 3.3 V 8 mA
2.5 V 6 mA
1.8 V 4 mA
CMOS Output Rise/Fall
Time
(20 to 80% VDD)
TR/TF 0.1 to 212.5 MHz,
CL= 15 pF
0.45 0.8 1.2 ns
0.1 to 212.5 MHz,
CL= no load
0.3 0.6 0.9 ns
LVPECL Output
Rise/Fall Time
(20 to 80% VDD)
TR/TF 100 565 ps
HCSL Output Rise/Fall
Time (20 to 80% VDD)
TR/TF 100 470 ps
LVDS Output Rise/Fall
Time (20 to 80% VDD)
TR/TF 350 800 ps
LVPECL Output
Common Mode
VOC 50 Ω to VDD– 2 V,
single-ended
VDD–
1.4 V
V
LVPECL Output Swing VO 50 Ω to VDD– 2 V,
single-ended
0.55 0.8 0.90 VPPSE
LVDS Output Common
Mode
VOC 100 Ω line-line
VDD= 3.3/2.5 V
1.13 1.23 1.33 V
100 Ω line-line, VDD= 1.8 V 0.83 0.92 1.00 V
LVDS Output Swing VO Single-ended, 100 Ω differential
termination
0.25 0.35 0.45 VPPSE
HCSL Output Common
Mode
VOC 50 Ω to ground 0.35 0.38 0.42 V
HCSL Output Swing VO Single-ended 0.58 0.73 0.85 VPPSE
Duty Cycle DC All formats 48 50 52 %
耐振低頻進(jìn)口諧振器,大型7050mm貼片晶體,CX5晶振

510ABA106M250BAGR Silicon芯科晶振 6G電信晶振 Si510差分振蕩器尺寸圖Si510 Si511

SMD振蕩器產(chǎn)品特性:

支持以下任何頻率

100kHz至250MHz

DLD 片內(nèi)LDO電源調(diào)節(jié)器

電源噪聲濾波 3.3、2.5或1.8 V工作電壓

差異(LVPECL,LVDS, HCSL)或CMOS輸出選項(xiàng) 可選集成1:2 CMOS

扇出緩沖器

OE上的不良抑制和通電

行業(yè)標(biāo)準(zhǔn)5 x 7、3.2 x 5、 和2.5 x 3.2毫米封裝

無(wú)鉛,符合RoHS標(biāo)準(zhǔn)

–40至85攝氏度操作Si510 Si511 1

Si510 Si511 2

更多相關(guān)Silicon晶振型號(hào)

Manufacturer Part Number原廠代碼 Manufacturer品牌 Series型號(hào) Frequency 頻率 Voltage - Supply電壓 Frequency Stability頻率穩(wěn)定度
510GBA100M000AAG Silicon Labs * - - -
510GBA125M000AAG Silicon Labs * - - -
510ABA100M000BAGR Silicon Labs Si510 100MHz 3.3V ±25ppm
510ABA125M000BAGR Silicon Labs Si510 125MHz 3.3V ±25ppm
510BBA100M000BAGR Silicon Labs Si510 100MHz 3.3V ±25ppm
510BBA125M000BAGR Silicon Labs Si510 125MHz 3.3V ±25ppm
510FBA100M000BAGR Silicon Labs Si510 100MHz 2.5V ±25ppm
510FBA125M000BAGR Silicon Labs Si510 125MHz 2.5V ±25ppm
511ABA100M000BAGR Silicon Labs Si511 100MHz 3.3V ±25ppm
511ABA125M000BAGR Silicon Labs Si511 125MHz 3.3V ±25ppm
511BBA100M000BAGR Silicon Labs Si511 100MHz 3.3V ±25ppm
511BBA125M000BAGR Silicon Labs Si511 125MHz 3.3V ±25ppm
511FBA100M000BAGR Silicon Labs Si511 100MHz 2.5V ±25ppm
511FBA125M000BAGR Silicon Labs Si511 125MHz 2.5V ±25ppm
510ABA106M250BAGR Silicon Labs Si510 106.25MHz 3.3V ±25ppm
510BBA106M250BAGR Silicon Labs Si510 106.25MHz 3.3V ±25ppm
511ABA106M250BAGR Silicon Labs Si511 106.25MHz 3.3V ±25ppm
511BBA106M250BAGR Silicon Labs Si511 106.25MHz 3.3V ±25ppm
511FBA106M250BAGR Silicon Labs Si511 106.25MHz 2.5V ±25ppm
510ABA000149BAGR Silicon Labs Si510 74.175824MHz 3.3V ±25ppm
510ABA74M2500BAGR Silicon Labs Si510 74.25MHz 3.3V ±25ppm
510BBA000149BAGR Silicon Labs Si510 74.175824MHz 3.3V ±25ppm
510BBA74M2500BAGR Silicon Labs Si510 74.25MHz 3.3V ±25ppm
510FBA000149BAGR Silicon Labs Si510 74.175824MHz 2.5V ±25ppm
510FBA74M2500BAGR Silicon Labs Si510 74.25MHz 2.5V ±25ppm
511ABA000149BAGR Silicon Labs Si511 74.175824MHz 3.3V ±25ppm
511ABA74M2500BAGR Silicon Labs Si511 74.25MHz 3.3V ±25ppm
511BBA000149BAGR Silicon Labs Si511 74.175824MHz 3.3V ±25ppm
511BBA74M2500BAGR Silicon Labs Si511 74.25MHz 3.3V ±25ppm
511FBA000149BAGR Silicon Labs Si511 74.175824MHz 2.5V ±25ppm
511FBA74M2500BAGR Silicon Labs Si511 74.25MHz 2.5V ±25ppm
510CBA156M250BAG Silicon Labs * - - -
510GBA156M250BAG Silicon Labs * - - -
510CBA156M250AAG Silicon Labs * - - -
510GBA156M250AAG SiliconCrystal * - - -
510ABA100M000AAGR Silicon Labs Si510 100MHz 3.3V ±25ppm
510ABA125M000AAGR Silicon Labs Si510 125MHz 3.3V ±25ppm
510BBA100M000AAGR Silicon Labs Si510 100MHz 3.3V ±25ppm
510BBA125M000AAGR Silicon Labs Si510 125MHz 3.3V ±25ppm
510FBA100M000AAGR Silicon Labs Si510 100MHz 2.5V ±25ppm
510FBA125M000AAGR Silicon Labs Si510 125MHz 2.5V ±25ppm
511ABA100M000AAGR Silicon Labs Si511 100MHz 3.3V ±25ppm
511ABA125M000AAGR Silicon Labs Si511 125MHz 3.3V ±25ppm
511BBA100M000AAGR Silicon Labs Si511 100MHz 3.3V ±25ppm
511BBA125M000AAGR Silicon Labs Si511 125MHz 3.3V ±25ppm
511FBA100M000AAGR Silicon Labs Si511 100MHz 2.5V ±25ppm
511FBA125M000AAGR Silicon Labs Si511 125MHz 2.5V ±25ppm
耐振低頻進(jìn)口諧振器,大型7050mm貼片晶體,CX5晶振

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