風(fēng)靡一時(shí)的Diodes諧振器FL400WFQA1,為何能留下不可磨滅的記憶?ECERA無(wú)源晶振
Diodes recognizes that semiconductor manufacturing is an energy-intensive process with the majority of our energy being consumed within our wafer fabrication and assembly and test facilities. We are committed to lowering climate risks related to our global carbon footprint by applying responsible energy management, driving energy efficiency, and pursuing reduction of energy use at the manufacturing sites and office buildings we occupy worldwide.
百利通亞陶認(rèn)識(shí)到半導(dǎo)體制造,研發(fā)精密的SMD晶振是一個(gè)能源密集型的過(guò)程我們的大部分能量消耗在晶圓制造、組裝和測(cè)試過(guò)程中設(shè)施。我們致力于通過(guò)以下方式降低與全球碳足跡相關(guān)的氣候風(fēng)險(xiǎn)應(yīng)用負(fù)責(zé)任的能源管理,推動(dòng)能源效率,并追求減少我們?cè)谑澜绺鞯氐纳a(chǎn)基地和辦公大樓的能源使用情況。風(fēng)靡一時(shí)的Diodes諧振器FL400WFQA1,為何能留下不可磨滅的記憶?ECERA無(wú)源晶振
FW2500025Z | Diodes晶振 | SaRonix-eCera™ FW | MHz Crystal | 25MHz | ±30ppm |
G43270018 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270018 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270018 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
FL374WFBR2 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFBR2 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFBR2 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
G13270007 | Diodes晶振 | SaRonix-eCera™ G1 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G13270009 | Diodes晶振 | SaRonix-eCera™ G1 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G93270001 | Diodes晶振 | SaRonix-eCera™ G9 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G93270001 | Diodes晶振 | SaRonix-eCera™ G9 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G93270001 | Diodes晶振 | SaRonix-eCera™ G9 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G23270023 | Diodes晶振 | SaRonix-eCera™ G2 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G23270006 | Diodes晶振 | SaRonix-eCera™ G2 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G23270013 | Diodes晶振 | SaRonix-eCera™ G2 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270021 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270021 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270021 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270007 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270007 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270007 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270021 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270021 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
Diodes公司(納斯達(dá)克股票代碼:DIOD)推出PAM8907壓電發(fā)聲器驅(qū)動(dòng)器,用于最大限度地提高陶瓷/壓電發(fā)聲器的聲壓級(jí) (SPL) 傳遞。PAM8907 具有內(nèi)置同步升壓轉(zhuǎn)換器,可在電池供電系統(tǒng)中擴(kuò)展SPL,并優(yōu)于其他類(lèi)似的發(fā)聲器驅(qū)動(dòng)器。該設(shè)備經(jīng)過(guò)優(yōu)化,可用于無(wú)線(xiàn)跟蹤器、工業(yè)報(bào)警系統(tǒng)、醫(yī)療設(shè)備和家用電器。
G83270021 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270025 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270025 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270025 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270022 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270022 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270022 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270019 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270019 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G43270019 | Diodes晶振 | SaRonix-eCera™ G4 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270023 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270023 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270023 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270025 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270025 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G83270025 | Diodes晶振 | SaRonix-eCera™ G8 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270010 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270010 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
G33270010 | Diodes晶振 | SaRonix-eCera™ G3 | kHz Crystal (Tuning Fork) | 32.768kHz | - |
FL520WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 52MHz | ±17ppm |
FL520WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 52MHz | ±17ppm |
FL520WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 52MHz | ±17ppm |
百利通亞陶晶振公司這款PAM8907發(fā)聲器驅(qū)動(dòng)器支持1.8V至5.5V的寬輸入電壓范圍,使其能夠滿(mǎn)足各種潛在應(yīng)用的需求??梢赃x擇22V PP或 31V PP輸出值(使用 GPIO),從而提供兩種不同的 SPL 選項(xiàng),從而優(yōu)化SPL或電池運(yùn)行時(shí)間的性能。其集成升壓轉(zhuǎn)換器僅需要一個(gè) 1.0µH 外部電感器,有助于降低材料清單成本和電路板空間。
FL374WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFBR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFBR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL374WFBR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±10ppm |
FL260WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±17ppm |
FL260WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±17ppm |
FL260WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±17ppm |
FL384WFIN1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 38.4MHz | ±12ppm |
FL384WFIN1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 38.4MHz | ±12ppm |
FL384WFIN1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 38.4MHz | ±12ppm |
FL400WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFQA1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFQA1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFQA1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±10ppm |
FL400WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±17ppm |
FL400WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±17ppm |
FL400WFMT1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 40MHz | ±17ppm |
FL260WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±10ppm |
FL260WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±10ppm |
FL260WFMR1 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 26MHz | ±10ppm |
PAM8907壓電發(fā)聲器驅(qū)動(dòng)器采用緊湊的10引腳U-QFN2020封裝,占用空間極小。
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